? 2002 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 500 v v dgr t j = 25 c to 150 c; r gs = 1 m ? 500 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c 50n50 50 a 55n50 55 a i dm t c = 25 c, pulse width limited by t jm 50n50 200 a 55n50 220 a i ar t c = 25 c 50n50 50 a 55n50 55 a e ar t c = 25 c60mj e as t c = 25 c3j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 5 v/ns t j 150 c, r g = 2 ? p d t c = 25 c 520 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in.) from case for 10 s 300 c m d mounting torque 1.13/10 nm/lb.in. weight 6 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 1ma 500 v v gs(th) v ds = v gs , i d = 8ma 2.5 4.5 v i gss v gs = 20 v, v ds = 0 200 na i dss v ds = v dss t j = 25 c25 a v gs = 0 v t j = 125 c2ma r ds(on) v gs = 10 v, i d = 0.5 i d25 50n50 100 m ? note 1 55n50 80 m ? single die mosfet features international standard package low r ds (on) hdmos tm process rugged polysilicon gate cell structure unclamped inductive switching (uis) rated low package inductance - easy to drive and to protect fast intrinsic rectifier applications dc-dc converters battery chargers switched-mode and resonant-mode power supplies dc choppers ac motor control temperature and lighting controls advantages plus 247 tm package for clip or spring mounting space savings high power density v dss i d25 r ds(on) ixfx 50n50 500 v 50 a 100 m ? ? ? ? ? ixfx 55n50 500 v 55 a 80 m ? ? ? ? ? t rr 250 ns hiperfet tm power mosfets 98507d (04/02) plus 247 tm (ixfx) g d d (tab) preliminary data sheet
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 note 1 45 s c iss 9400 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1280 pf c rss 460 pf t d(on) 45 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 60 ns t d(off) r g = 2 ? (external), 120 ns t f 45 ns q g(on) 330 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 55 nc q gd 155 nc r thjc 0.22 k/w r thck 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 55n50 55 a 50n50 50 a i sm repetitive; 55n50 220 a pulse width limited by t jm 50n50 200 a v sd i f = i s , v gs = 0 v note 1 1.5 v t rr 250 ns q rm 1.0 c i rm 10 a i f =25 a,-di/dt = 100 a/ s, v r = 100 v dim. millimeter i nches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) plus 247 tm outline note: 1.pulse test, t 300 s, duty cycle d 2 % ixfx 50n50 ixfx 55n50
? 2002 ixys all rights reserved t c - degrees c -50 -25 0 25 50 75 100 125 150 i d - amperes 0 10 20 30 40 50 60 t j - degrees c 25 50 75 100 125 15 0 r ds(on) - normalized 1.0 1.2 1.4 1.6 1.8 2.0 2.2 v gs - volts 3.0 3.5 4.0 4.5 5.0 5.5 6.0 i d - amperes 0 20 40 60 80 100 t c - degrees c -50 -25 0 25 50 75 100 125 150 i d - amperes 0 10 20 30 40 50 60 i d - amperes 0 20 40 60 80 100 120 r ds(on) - normalized 0.8 1.2 1.6 2.0 2.4 2.8 v ds - volts 0 4 8 12 16 20 24 i d - amperes 0 20 40 60 80 100 v ds - volts 0 4 8 12162024 i d - amperes 0 20 40 60 80 100 120 140 5v v gs = 10v v gs = 10v 9v 8v 7v t j = 125 o c v gs = 10v t j = 25 o c 6v 6v 5v t j = 25 o c i d = 55a t j = 125 o c t j = 125 o c v gs = 10v 9v 8v 7v i d = 27.5a i d - amperes 0 20 40 60 80 100 120 r ds(on) - normalized 0.8 1.2 1.6 2.0 2.4 2.8 v gs = 10v v gs = 10v t j = 25 o c t j = 25 o c t j = 125 o c ixf_55n50 ixf_50n50 t j = 25 o c figure 1. output characteristics at 25 o c figure 2. output characteristics at 125 o c figure 3. r ds(on) normalized to 0.5 i d25 value vs. i d figure 4. r ds(on) normalized to 0.5 i d25 value vs. t j figure 5. drain current vs. case temperature figure 6. admittance curves ixfx 50n50 ixfx 55n50
ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728b1 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 figure 7. gate charge figure 8. capacitance curves figure 9. forward voltage drop of the intrinsic diode figure10. forward bias safe operating area ixfx 50n50 ixfx 55n50 pulse width - seconds 10 -4 10 -3 10 -2 10 -1 10 0 10 1 r(th) jc - k/w 0.00 0.01 0.10 1.00 0.2 0.4 0.6 0.8 1.0 i d - amperes 0 20 40 60 80 100 t j = 125 o c t j = 25 o c gate charge - nc 0 50 100 150 200 250 300 350 v gs - volts 0 2 4 6 8 10 12 v ds = 250v i d = 27.5a v ds - volts 0 5 10 15 20 25 30 35 40 capacitance - pf 100 1000 10000 crss coss ciss f = 1mhz
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